The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Dec. 12, 2018
International Business Machines Corporation, Armonk, NY (US);
Babar Khan, Ossining, NY (US);
Ning Li, White Plains, NY (US);
Arvind Kumar, Chappaqua, NY (US);
Yun Seog Lee, Seoul, KR;
Joel P. de Souza, Putnam Valley, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a field-effect transistor, a first back-end-of-line (BEOL) metallization level and a second BEOL metallization level disposed above the first BEOL metallization level. A portion of the field-effect transistor includes lithium therein, and the field-effect transistor is integrated between the first and second BEOL metallization levels. The portion of the field-effect transistor including the lithium therein can be a channel layer, or a source and/or drain region.