The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Sep. 08, 2020
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Jumpei Tajima, Mitaka, JP;

Toshiki Hikosaka, Kawasaki, JP;

Shinya Nunoue, Ichikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/207 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7783 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/66462 (2013.01); H01L 29/4236 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes first, second, and third electrodes, first, second, and third semiconductor layers, and a first insulating member. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. A direction from the first partial region toward the second partial region is along a first direction. The first electrode includes a first electrode portion. A direction from the first electrode portion toward the second electrode is along the first direction. A second direction from the third partial region toward the third electrode crosses the first direction. The second semiconductor layer includes a first semiconductor portion and a second semiconductor portion. At least a portion of the first semiconductor layer is between the third and second semiconductor layers. The first insulating member includes a first insulating portion. The first insulating portion is provided between the third partial region and the third electrode.


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