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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11444163 B1

PDFFull Text
Date of Patent:
Sep. 13, 2022

Filed:

Apr. 28, 2020

Channel structure having tunneling layer with adjusted nitrogen weight percent and methods for forming the same

Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Song Liu, Wuhan, CN;

Chao Shen, Wuhan, CN;

Dejian Chen, Wuhan, CN;

Wenting Wang, Wuhan, CN;

Xinxin Huang, Wuhan, CN;

Zhiping Xu, Wuhan, CN;

Assignee:

YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;

Attorney:

Bayes PLLC

Primary Examiner:

Mohammad M Choudhry

Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 27/1157 (2017.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/40117 (2019.08); H01L 21/0214 (2013.01); H01L 21/0228 (2013.01); H01L 21/3105 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); H01L 29/4234 (2013.01); H01L 29/518 (2013.01);
Abstract

Embodiments of memory devices and fabrication methods thereof are disclosed. In an example, a memory device includes a substrate, a memory stack, and a channel structure. The memory stack includes interleaved conductor layers and dielectric layers over the substrate. The channel structure extends through the memory stack into the substrate and includes a functional layer that includes a tunneling layer of which a nitrogen weight percent is not greater than about 28%.

Find Patent Forward Citations

Liu, Song. (2022). Channel structure having tunneling layer with adjusted nitrogen weight percent and methods for forming the same (U.S. Patent No. 11444163). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11444163

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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