The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Jan. 22, 2021
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Anupam Dutta, Bangalore, IN;

Venkata N. R. Vanukuru, Bangalore, IN;

John J. Ellis-Monaghan, Grand Isle, VT (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/761 (2006.01); H01L 21/762 (2006.01); H01L 29/08 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 21/761 (2013.01); H01L 21/76224 (2013.01); H01L 29/0847 (2013.01); H01L 29/861 (2013.01);
Abstract

The disclosure provides an integrated circuit (IC) structure with a body contact to a well with multiple diode junctions. A first doped well is in a substrate. A transistor is on the first doped well. A trench isolation (TI) is adjacent a portion of the first doped well. A second doped well within the substrate has a bottom surface beneath a bottom surface of the first doped well. A sidewall of the TI horizontally abuts the second doped well. A first diode junction is between the second doped well and the first doped well. A second diode junction is between the second doped well and the substrate. A body contact is on the second doped well.


Find Patent Forward Citations

Loading…