The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Jan. 06, 2021
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventor:

Linggang Fang, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 29/94 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 28/56 (2013.01); H01L 28/40 (2013.01); H01L 28/60 (2013.01); H01L 29/945 (2013.01); H01L 29/40114 (2019.08);
Abstract

A poly-insulator-poly (PIP) capacitor including a substrate having a capacitor forming region; a first capacitor dielectric layer on the capacitor forming region; a first poly electrode on the first capacitor dielectric layer; a second capacitor dielectric layer on the first poly electrode; and a second poly electrode on the second capacitor dielectric layer. A third poly electrode is disposed adjacent to a first sidewall of the second poly electrode. A third capacitor dielectric layer is disposed between the third poly electrode and the second poly electrode. A fourth poly electrode is disposed adjacent to a second sidewall of the second poly electrode opposite to the first sidewall. A fourth capacitor dielectric layer is disposed between the fourth poly electrode and the second poly electrode.


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