The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2022

Filed:

Jun. 17, 2020
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Desmond Jia Jun Loy, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Shyue Seng Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2472 (2013.01); G11C 11/5614 (2013.01); G11C 11/5685 (2013.01); G11C 13/0069 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/1266 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01); G11C 2013/009 (2013.01);
Abstract

A memory device may be provided, including first, second and third electrodes, first and second mask elements and a switching layer. The first mask element may be arranged over a portion of and laterally offset from the first electrode. The second electrode may be arranged over the first mask element. The second mask element may be arranged over the second electrode. The third electrode may be arranged over a portion of and laterally offset from the second mask element. The switching layer may be arranged between the first electrode and the third electrode, along a first side surface of the first mask element, a first side surface of the second electrode and a first side surface of the second mask element.


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