The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Jun. 10, 2020
Integrated Silicon Solution, (Cayman) Inc., Grand Cayman, KY;
Dafna Beery, Palo Alto, CA (US);
Peter Cuevas, Los Gatos, CA (US);
Amitay Levi, Cupertino, CA (US);
Andrew J. Walker, Mountain View, CA (US);
Integrated Silicon Solution, (Cayman) Inc., Grand Cayman, KY;
Abstract
A vertical transistor structure having a metal gate wordline. The vertical transistor structure can include an epitaxially grown semiconductor column surrounded by a thin gate dielectric layer. A gate structure can surround the semiconductor column and the gate dielectric layer. The device can include first and second dielectric layers and an electrically conductive metal layer located between the first and second dielectric layers. The electrically conductive metal of the gate structure can be tungsten (W). In addition, a thin layer of Ti or TiN can be formed between the metal gate layer and the first and second dielectric layers and the gate dielectric layer. The metal gate layer can be formed with or without the use of a sacrificial layer.