The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
May. 26, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chia-Chung Chen, Keelung, TW;
Chi-Feng Huang, Hsinchu County, TW;
Victor Chiang Liang, Hsinchu, TW;
Chung-Hao Chu, Hsinchu, TW;
Ching-Yu Yang, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device includes at least the following steps is provided. A first metal layer is formed on a substrate. A first dielectric layer is formed on the substrate. The first dielectric layer is patterned, thereby forming a first opening exposing the first metal layer. A second metal layer is formed on the first dielectric layer and filling into the first opening. The second metal layer is patterned, thereby forming a metal pad. A second dielectric layer is formed on the first dielectric layer and the metal pad. The second dielectric layer is patterned, thereby forming a second opening exposing the metal pad. A first annealing process is performed in an atmosphere of a gas including 50 vol % to 100 vol % of hydrogen.