The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Oct. 20, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Chung-Lei Chen, Hsinchu, TW;
Cheng-Hsin Chen, Toufen, TW;
Chung Chieh Ting, Hsinchu, TW;
Che-Yi Lin, Hsinchu, TW;
Clark Lee, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/02123 (2013.01); H01L 21/30625 (2013.01); H01L 21/31133 (2013.01);
Abstract
One or more semiconductor processing tools may form a deep trench within a silicon wafer. The one or more semiconductor processing tools may deposit a first insulating material within the deep trench. The one or more semiconductor processing tools may form, after forming the deep trench with the silicon wafer, a shallow trench above the deep trench. The one or more semiconductor processing tools may deposit a second insulating material within the shallow trench.