The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Aug. 12, 2021
Applicant:
Ferroelectric Memory Gmbh, Dresden, DE;
Inventors:
Assignee:
FERROELECTRIC MEMORY GMBH, Dresden, DE;
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H01L 27/11509 (2017.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2275 (2013.01); G11C 11/221 (2013.01); G11C 11/2255 (2013.01); G11C 11/2257 (2013.01); G11C 11/2297 (2013.01); H01L 27/11509 (2013.01); H01L 29/516 (2013.01); H01L 29/78391 (2014.09);
Abstract
Various aspects relate to a memory cell including: a field-effect transistor memory structure, wherein a source/drain current through the field-effect transistor memory structure is a function of a gate voltage supplied to a gate of the field-effect transistor memory structure and a memory state in which the field-effect transistor memory structure is residing in; and an access device coupled to the gate of the field-effect transistor memory structure, wherein the access device is configured to control a voltage present at the gate of the field-effect transistor memory structure.