The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Dec. 27, 2019
Wuxi China Resources Huajing Microelectronics Co., Ltd., Jiangsu, CN;
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD., Jiangsu, CN;
Abstract
The present disclosure discloses a trench MOSFET and a method of manufacturing trench MOSFET. The trench MOSFET includes a substrate, an epitaxial layer, a plurality of trenches, and body region; the substrate has a first conductivity type; the epitaxial layer has the first conductivity type; the plurality of trenches are formed in the epitaxial layer, and at least two of the plurality of trenches are communicated with each other a gate structure is provided in the trench; the body region has a second conductivity type and has a second conductivity type and is disposed among the plurality of trenches.