The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Mar. 11, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chia-Ta Yu, New Taipei, TW;

Hsiao-Chiu Hsu, Hsinchu, TW;

Feng-Cheng Yang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 21/76 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/76224 (2013.01); H01L 27/0886 (2013.01); H01L 29/6681 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01);
Abstract

A semiconductor structure includes semiconductor layers disposed over a substrate and oriented lengthwise in a first direction, a metal gate stack disposed over the semiconductor layers and oriented lengthwise in a second direction perpendicular to the first direction, where the metal gate stack includes a top portion and a bottom portion that is interleaved with the semiconductor layers, source/drain features disposed in the semiconductor layers and adjacent to the metal gate stack, and an isolation structure protruding from the substrate, where the isolation structure is oriented lengthwise along the second direction and spaced from the metal gate stack along the first direction, and where the isolation structure includes a dielectric layer and an air gap.


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