The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Dec. 20, 2019
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Phyllis Shi Ya Lim, Singapore, SG;
Handoko Linewih, Singapore, SG;
Shu Zhong, Singapore, SG;
Chor Shu Cheng, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A semiconductor device may be provided, including a substrate which includes a first semiconductor layer having a well region arranged within the first semiconductor layer, a buried insulator layer arranged over the first semiconductor layer, and a second semiconductor layer arranged over the buried insulator layer. The semiconductor device may include a capacitive structure including: the well region, at least one contact to the well region, at least a portion of the buried insulator layer over the well region, at least a portion of the second semiconductor layer, a source region and a drain region arranged over the second semiconductor layer, a gate dielectric layer arranged over the second semiconductor layer and arranged laterally between the source region and the drain region, and a gate layer arranged over the gate dielectric layer. The well region, the source region, and the drain region may have the same conductivity type.