The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Apr. 07, 2021
Applicant:
Ferroelectric Memory Gmbh, Dresden, DE;
Inventor:
Marko Noack, Dresden, DE;
Assignee:
Ferroelectric Memory GmbH, Dresden, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); G11C 11/22 (2006.01); H01L 27/11592 (2017.01); H01L 27/11509 (2017.01); H01L 27/1159 (2017.01); H01L 27/11507 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11592 (2013.01); G11C 11/221 (2013.01); G11C 11/223 (2013.01); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01); G11C 11/2297 (2013.01); H01L 27/1159 (2013.01); H01L 27/11507 (2013.01); H01L 27/11509 (2013.01);
Abstract
A memory cell circuit is provided that may include: a memory cell, the memory cell including a ferroelectric structure; a first control terminal and a second control terminal connected to the memory cell, the first control terminal and the second control terminal being configured to allow an operation of the memory cell; and a first auxiliary terminal and a second auxiliary terminal connected to the memory cell, the first auxiliary terminal and the second auxiliary terminal being configured to provide an auxiliary voltage to the ferroelectric structure.