The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2022

Filed:

Apr. 13, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Ni-Wan Fan, Miao-Li County, TW;

Ting-Wei Chiang, New Taipei, TW;

Cheng-I Huang, Hsinchu, TW;

Jung-Chan Yang, Longtan Township, TW;

Hsiang-Jen Tseng, Hsinchu, TW;

Lipen Yuan, Jhubei, TW;

Chi-Yu Lu, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 23/485 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 29/66 (2006.01); H01L 27/118 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/76895 (2013.01); H01L 21/823425 (2013.01); H01L 23/485 (2013.01); H01L 23/535 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 29/66545 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01); H01L 27/11807 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to an integrated circuit. The integrated circuit includes first and second source/drain regions within a substrate. A gate structure is over the substrate between the first and second source/drain regions. A middle-end-of-the-line (MEOL) structure is over the second source/drain region. The MEOL structure has a bottommost surface that continuously extends in a first direction from directly contacting a top of the second source/drain region to laterally past an outer edge of the second source/drain region. A conductive structure is on the MEOL structure. A second gate structure is separated from the gate structure by the second source/drain region. The conductive structure continuously extends in a second direction over the MEOL structure and past opposing sides of the second gate structure. A plurality of conductive contacts are configured to electrically couple an interconnect wire and the MEOL structure along through the conductive structure.


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