The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
May. 05, 2019
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Mengkai Zhu, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/762 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/7624 (2013.01); H01L 21/76832 (2013.01); H01L 21/76895 (2013.01); H01L 27/1203 (2013.01); H01L 29/78603 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate, wherein the substrate comprises a first semiconductor layer, an insulating layer, and a second semiconductor layer; forming an active device on the substrate; forming an interlayer dielectric (ILD) layer on the substrate and the active device; forming a first contact plug in the ILD layer to electrically connect the active device; and forming a second contact plug in the ILD layer and the insulating layer after forming the first contact plug.