The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Sep. 01, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Youngchan Kim, Suwon-si, KR;
Youngtak Kim, Hwaseong-si, KR;
Jungah Kim, Hwaseong-si, KR;
Hoon Han, Anyang-si, KR;
Geunjoo Baek, Cheonan-si, KR;
Chisung Ihn, Cheonan-si, KR;
Sangmoon Yun, Cheonan-si, KR;
Samsung Electronics Co. , Ltd., Suwon-si, KR;
SAMYOUNG PURE CHEMICALS CO., LTD., Cheonan-si, KR;
Abstract
Etchant compositions described herein include etchant compositions for etching a silicon film and may include nitric acid, fluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water. The nitrogen compound may include fluorine (F), phosphorus (P), and/or carbon (C). Also described are methods of manufacturing an integrated circuit (IC) device. The methods may include providing a structure in which a silicon film doped at a first dopant concentration and an epitaxial film doped at a second dopant concentration are stacked. The second dopant concentration may be different from the first dopant concentration. The silicon film may be selectively etched from the structure by using an etchant composition.