The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
Apr. 30, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Taesung Kang, Seoul, KR;
Youngkyu Lee, Hwaseong-si, KR;
Kyoungmin Kim, Namyangju-si, KR;
Ilgweon Kim, Hwaseong-si, KR;
Bokyeon Won, Namyangju-si, KR;
Seokjae Lee, Gwangmyeong-si, KR;
Sungho Jang, Seoul, KR;
Joon Han, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
An integrated circuit device includes a sense amplifier configured to sense a voltage change of a bit line, wherein the sense amplifier includes: a sense amplifier unit connected to the bit line and a complementary bit line, configured to sense the voltage change of the bit line in response to a control signal, configured to adjust voltages of a sensing bit line and a complementary sensing bit line based on the sensed voltage change, and including a first PMOS transistor and a first NMOS transistor; and a first offset canceling unit connecting the bit line to the complementary sensing bit line in response to an offset canceling signal, and including a first offset canceling transistor arranged between the first NMOS transistor and the first PMOS transistor, wherein the first offset canceling transistor shares a common impurity region with the first NMOS transistor.