The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2022
Filed:
May. 14, 2020
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Tetsuya Iida, Tokyo, JP;
Yasutaka Nakashiba, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/122 (2006.01); G02B 6/30 (2006.01); G02B 6/12 (2006.01); G02B 6/24 (2006.01); H04B 10/67 (2013.01);
U.S. Cl.
CPC ...
G02B 6/122 (2013.01); G02B 6/12002 (2013.01); G02B 6/1228 (2013.01); G02B 6/241 (2013.01); G02B 6/305 (2013.01); H04B 10/671 (2013.01);
Abstract
A semiconductor device includes a first insulating film, a first optical waveguide and a second optical waveguide. The first insulating film has a first surface and a second surface opposite to the first surface. The first optical waveguide is formed on the first surface of the first insulating film. The second optical waveguide is formed on the second surface of the first insulating film. The second optical waveguide, in plan view, overlaps with an end portion of the first optical waveguide without overlapping with another end portion of the first optical waveguide.