The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Mar. 13, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Jose-Ignacio Del-Agua-Borniquel, Bertem, BE;
Hendrik F. W. Dekkers, Tienen, BE;
Hans Van Meer, Middleton, MA (US);
Jae Young Lee, Bedford, MA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/425 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02631 (2013.01); H01L 21/425 (2013.01); H01L 29/247 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01);
Abstract
Methods and apparatus for forming a thin film transistor (TFT) having a metal oxide layer. The method may include forming an amorphous metal oxide layer and treating the metal oxide layer with a silicon containing gas or plasma including Siions. The silicon treatment of the metal oxide layer helps fill the oxygen vacancies in the metal oxide channel layer, leading to a more stable TFT and preventing a negative threshold voltage in the TFT.