The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

Jul. 02, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Zia A. Shafi, Boise, ID (US);

Luca Laurin, Lissone, IT;

Durga P. Panda, Boise, ID (US);

Sara Vigano´, Monza, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/18 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 21/823814 (2013.01); H01L 21/823835 (2013.01); H01L 21/823857 (2013.01); H01L 27/092 (2013.01); H01L 29/6659 (2013.01);
Abstract

Some embodiments include an integrated assembly having a first gate operatively adjacent a channel region, a first source/drain region on a first side of the channel region, and a second source/drain region on an opposing second side of the channel region. The first source/drain region is spaced from the channel region by an intervening region. The first and second source/drain regions are gatedly coupled to one another through the channel region. A second gate is adjacent a segment of the intervening region and is spaced from the first gate by an insulative region. A lightly-doped region extends across the intervening region and is under at least a portion of the first source/drain region. Some embodiments include methods of forming integrated assemblies.


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