The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Mar. 05, 2020
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Anindya Nath, Essex Junction, VT (US);
Alain F. Loiseau, Williston, VT (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/74 (2006.01); H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7412 (2013.01); H01L 29/04 (2013.01); H01L 29/7302 (2013.01);
Abstract
The present disclosure relates to a polysilicon-diode triggered compact silicon controlled rectifier. In particular, the present disclosure relates to a structure including a silicon controlled rectifier (SCR) which includes an n-well adjacent and in direct contact with a p-well, the SCR includes at least one shallow trench isolation (STI) region, and at least one polysilicon diode on top of the at least one STI region.