The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

Feb. 01, 2021
Applicant:

Disco Corporation, Tokyo, JP;

Inventor:

Masaru Nakamura, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/268 (2013.01); H01L 21/304 (2013.01);
Abstract

There is provided a wafer processing method including a protective member disposing step of disposing a protective member on a top surface of a wafer; a modified layer forming step of forming an annular modified layer by irradiating the wafer with a laser beam so as to position, within a peripheral surplus region, a condensing point of the laser beam having a wavelength transmissible through the wafer; a separating step of separating a part or a whole of the peripheral surplus region from the wafer by dividing the wafer with the annular modified layer as a starting point; and a grinding step of thinning the wafer by grinding an undersurface of the wafer. In the modified layer forming step, the modified layer is formed in a shape of a circular truncated cone whose diameter is decreased from the top surface to the undersurface of the wafer.


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