The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Feb. 28, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Abstract
A method for fabricating a semiconductor device includes providing a to-be-etched layer, including alternately arranged first regions and second regions in a first direction. Each first region adjoins adjacent second regions, and each second region includes a trench region. The method includes forming a first mask layer on the to-be-etched layer; implanting doping ions into the first mask layer outside of the trench region; forming a doped separation layer in the first mask layer of the second region to divide the first mask layer into portions arranged in a second direction perpendicular to the first direction; forming a first trench in the first mask layer of the first region; and removing the first mask layer formed in the trench region on both sides of the doped separation layer to form a second trench divided into portions arranged in the second direction by the doped separation layer.