The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

Nov. 27, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Madhu Santosh Kumar Mutyala, Santa Clara, CA (US);

Sanjay Kamath, Fremont, CA (US);

Deenesh Padhi, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/4584 (2013.01); C23C 16/50 (2013.01); H01J 37/32137 (2013.01); H01L 21/02164 (2013.01); H01L 21/02214 (2013.01); H01J 37/32183 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/3321 (2013.01);
Abstract

Exemplary deposition methods may include forming a plasma of an oxygen-containing precursor within a processing region of a semiconductor processing chamber. The processing region may house a semiconductor substrate on a substrate support. The methods may include, while maintaining the plasma of the oxygen-containing precursor, flowing a silicon-containing precursor into the processing region of the semiconductor processing chamber at a first flow rate. The methods may include ramping the first flow rate of the silicon-containing precursor over a period of time to a second flow rate greater than the first flow rate. The methods may include depositing a silicon-containing material on the semiconductor substrate.


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