The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2022
Filed:
Feb. 23, 2018
Applicant:
Seagate Technology Llc, Cupertino, CA (US);
Inventors:
Meysam Asadi, Honolulu, HI (US);
Zhengang Chen, San Jose, CA (US);
Erich F. Haratsch, San Jose, CA (US);
Assignee:
Seagate Technology LLC, Fremont, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G01R 27/26 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G01R 27/2605 (2013.01); G11C 16/3422 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01);
Abstract
A method for capacitance coupling parameter estimation includes determining a plurality of mean voltages among a plurality of memory cells of the memory in each of a plurality of cases related to inter-cell interference, generating a plurality of middle state mean voltages in response to the mean voltages, and adjusting one or more threshold voltages used to read from the memory based on the middle state mean voltages to operate independently of knowledge of middle state distributions in the memory cells.