The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Dec. 13, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Shigeru Kasai, Yamanashi, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05B 1/02 (2006.01); B32B 7/027 (2019.01); B32B 7/12 (2006.01); B32B 37/14 (2006.01); H01L 21/687 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H05B 1/0233 (2013.01); B32B 7/027 (2019.01); B32B 7/12 (2013.01); B32B 37/144 (2013.01); H01L 21/6831 (2013.01); H01L 21/68757 (2013.01);
Abstract

There is provided a mounting table on which a workpiece is mounted, including: a plurality of layers including a ceiling layer having a front surface on which the workpiece is mounted, and a heating layer formed at a rear surface side of the ceiling layer and configured to heat the ceiling layer, the plurality of layers being stacked above one another. Each of the plurality of layers is formed by a silicon single crystal substrate or a silicon polycrystalline substrate. Each of the plurality of layers is bonded to a different layer which is adjacent in a stacking direction through oxide films formed on the silicon single crystal substrate or the silicon polycrystalline substrate.


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