The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Mar. 13, 2018
Applicant:

Lintec Corporation, Itabashi-ku, JP;

Inventors:

Kunihisa Kato, Warabi, JP;

Wataru Morita, Saitama, JP;

Tsuyoshi Muto, Saitama, JP;

Yuma Katsuta, Gyoda, JP;

Assignee:

LINTEC CORPORATION, Itabashi-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/08 (2006.01); H01L 35/16 (2006.01); H01L 35/18 (2006.01);
U.S. Cl.
CPC ...
H01L 35/08 (2013.01); H01L 35/16 (2013.01); H01L 35/18 (2013.01);
Abstract

Provided are an electrode material for thermoelectric conversion modules capable of preventing cracking and peeling of electrodes that may occur at the bonding parts of a thermoelectric element and an electrode under high-temperature conditions to thereby maintain a low resistance at the bonding parts, and a thermoelectric conversion module using the material. The electrode material for thermoelectric conversion modules includes a first substrate and a second substrate facing each other, a thermoelectric element formed between the first substrate and the second substrate, and an electrode formed on at least one substrate of the first substrate and the second substrate, wherein the substrate is a plastic film, the thermoelectric element contains a bismuth-tellurium-based thermoelectric semiconductor material, a telluride-based thermoelectric semiconductor material, an antimony-tellurium-based thermoelectric semiconductor material, or a bismuth-selenide-based thermoelectric semiconductor material, the electrode that is in contact with the thermoelectric element is formed of a metal material, and the metal material is gold, nickel, aluminum, rhodium, platinum, chromium, palladium, stainless steel, molybdenum or an alloy containing any of these metals.


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