The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Feb. 17, 2021
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Arkadiusz Malinowski, Dresden, DE;
Alexander M. Derrickson, Saratoga Springs, NY (US);
Judson R. Holt, Ballston Lake, NY (US);
Assignee:
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/735 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/735 (2013.01); H01L 29/0649 (2013.01); H01L 29/6625 (2013.01);
Abstract
A lateral bipolar junction transistor (BJT) device includes: an emitter region, a collector region, and a base region, the base region positioned between and laterally separating the emitter region and the collector region, the base region including an intrinsic base region; and a cavity formed in a semiconductor substrate and filled with an insulating material, the cavity physically separating a lower surface of the intrinsic base region from the semiconductor substrate.