The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Nov. 10, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Lin Hou, Leuven, BE;

Peter Rabkin, Cupertino, CA (US);

Yangyin Chen, Leuven, BE;

Masaaki Higashitani, Cupertino, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 27/11582 (2017.01); H01L 21/50 (2006.01); H01L 23/532 (2006.01); H01L 27/11556 (2017.01); H01L 21/60 (2006.01);
U.S. Cl.
CPC ...
H01L 24/80 (2013.01); H01L 21/50 (2013.01); H01L 23/53228 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 25/50 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 21/60 (2021.08);
Abstract

A nucleation suppression layer including a self-assembly material can be formed on a surface of a bonding dielectric layer without depositing the self-assembly material on physically exposed surfaces of first metal bonding pads of a first semiconductor die. Metallic liners including a second metal can be formed on the physically exposed surfaces of the metal bonding pads without depositing the second metal on the nucleation suppression layer. The first semiconductor die is bonded to a second semiconductor die by inducing metal-to-metal bonding between mating pairs of the first metal bonding pads and second metal bonding pads of the second semiconductor die.


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