The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Nov. 05, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Bowo Choi, Suwon-si, KR;

Youngtak Kim, Hwaseong-si, KR;

Sangjine Park, Suwon-si, KR;

Suji Kim, Yongin-si, KR;

Jaeuk Shin, Suwon-si, KR;

Hyunjung Lee, Goyang-si, KR;

Jihun Cheon, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10855 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 27/10891 (2013.01);
Abstract

A semiconductor device includes a landing pad, a first insulating pattern in contact with a lower portion of a side surface of the landing pad, a pad oxide layer having a lateral portion disposed on a portion of an upper surface of the landing pad and a vertical portion in contact with an upper portion of the side surface of the landing pad, a second insulating pattern in contact with an upper surface of the first insulating pattern and covering the first insulating pattern and the pad oxide layer, and a lower electrode that vertically passes through the second insulating pattern and is in contact with a portion of the upper surface and an upper portion of a side surface of the landing pad.


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