The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Jan. 14, 2019
Applicant:

Soitec, Bernin, FR;

Inventors:

Didier Landru, Le Champ-près-Froges, FR;

Oleg Kononchuk, Theys, FR;

Nadia Ben Mohamed, Echirolles, FR;

Rénald Guerin, Saint Ismier, FR;

Norbert Colombet, Domene, FR;

Assignee:

Soitec, Benin, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/2007 (2013.01); H01L 21/76243 (2013.01); H01L 21/76259 (2013.01);
Abstract

A detachable structure comprises a carrier substrate and a silicon oxide layer positioned on the substrate at a first interface. The detachable structure is notable in that: the oxide layer has a thickness of less than 200 nm; light hydrogen and/or helium species are distributed deeply and over the entire area of the structure according to an implantation profile, a maximum concentration of which is located in the thickness of the oxide layer; the total dose of implanted light species, relative to the thickness of the oxide layer, exceeds, at least by a factor of five, the solubility limit of these light species in the oxide layer.


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