The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Dec. 18, 2020
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Vincent Mazzocchi, Grenoble, FR;
Sylvain Maitrejean, Grenoble, FR;
Abstract
A method for forming a layer by cycled epitaxy includes at least one sequence of steps each having a first epitaxial deposition forming a first growth layer portion having a first thickness on a first monocrystalline pattern and a second growth layer portion having a second thickness on a second non-monocrystalline pattern, the second thickness being greater than the first thickness, and a second epitaxial deposition forming a first sacrificial layer portion having a third thickness on the first growth layer portion and a second sacrificial layer portion having a fourth thickness on the second growth layer portion. The first and second growth layer portions have an additional element content, greater than the additional element content present in the first and second sacrificial layer portions. The sequence also includes etching the whole of the third and fourth thicknesses and stopping before having consumed the whole of the first thickness.