The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2022

Filed:

Aug. 24, 2015
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Kazuyuki Ikenaga, Tokyo, JP;

Masaki Ishiguro, Tokyo, JP;

Masahiro Sumiya, Tokyo, JP;

Shigeru Shirayone, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 16/00 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32715 (2013.01); H01J 37/32568 (2013.01); H01J 37/32577 (2013.01); H01J 37/32697 (2013.01); H01J 37/32706 (2013.01); H01J 37/32724 (2013.01);
Abstract

Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.


Find Patent Forward Citations

Loading…