The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Feb. 23, 2018
Sumitomo Electric Industries, Ltd., Osaka, JP;
Yusuke Yoshizumi, Kobe, JP;
Hideki Osada, Kobe, JP;
Shugo Minobe, Kobe, JP;
Yoshiaki Hagi, Kobe, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A gallium nitride crystal substrate has a diameter of 50-155 mm and a thickness of 300-800 μm and includes any of a flat portion and a notch portion in a part of an outer edge. The gallium nitride crystal substrate contains any of oxygen atoms, silicon atoms, and carriers at a concentration of 2×10to 4×10cm, and has an average dislocation density of 1000 to 5×10cmin any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in a main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface.