The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Jun. 18, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H04R 17/02 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H04R 17/02 (2013.01); B81B 3/0021 (2013.01); B81C 1/00158 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/04 (2013.01); H04R 2201/003 (2013.01);
Abstract
A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate and a membrane over the substrate. The membrane includes a piezoelectric material configured to generate charges in response to an acoustic wave. The membrane includes a via pattern having first lines that partition the membrane into slices such that the slices are separated from each other at a first region near an edge of the membrane and connected to each other at a second region.