The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Aug. 31, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yu-Feng Yin, Hsinchu County, TW;

Tai-Yen Peng, Hsinchu, TW;

An-Shen Chang, Hsinchu County, TW;

Han-Ting Tsai, Kaoshiung, TW;

Qiang Fu, Hsinchu, TW;

Chung-Te Lin, Tainan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 21/7684 (2013.01); H01L 23/5226 (2013.01); H01L 43/12 (2013.01);
Abstract

The present disclosure provides a semiconductor structure, including a substrate, including a first region and a second region adjacent to the first region, a magnetic tunnel junction (MTJ) over the first region, a spacer on a sidewall of the MTJ, a hard mask over the MTJ, a first dielectric layer laterally surrounding the spacer and the hard mask, a top electrode over the hard mask, and an etch stop stack laterally surrounding the top electrode.


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