The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Sep. 21, 2020
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Toru Tanzawa, Tokyo, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 27/11526 (2017.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01); H01L 27/11573 (2017.01); H01L 27/11575 (2017.01); G11C 8/12 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11526 (2013.01); G11C 16/04 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01); G11C 8/12 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01);
Abstract
Some embodiments include apparatuses and methods of using such apparatuses. One of the apparatuses includes a semiconductor material, a pillar extending through the semiconductor material, a select gate located along a first portion of the pillar, memory cells located along a second portion of the pillar, and transistors coupled to the select gate through a portion of the semiconductor material. The transistors include sources and drains formed from portions of the semiconductor material. The transistors include gates that are electrically uncoupled to each other.