The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Aug. 28, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Takayuki Katsunuma, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); C23C 16/455 (2006.01); C23C 16/04 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); C23C 16/042 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01J 37/32091 (2013.01); H01J 37/32449 (2013.01); H01J 37/32834 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01);
Abstract
A method of forming a film on a substrate that includes an etching layer and a mask formed on the etching layer. The method comprises (a) exposing the substrate, in a reaction chamber, to a precursor to dispose precursor particles on at least a sidewall of a recess in the etching layer; (b) supplying an inhibitor gas and a modification gas to the reaction chamber to generate a plasma; and (c) modifying the precursor particles on the sidewall into a protective film while the inhibitor gas and the modification gas are supplied in the reaction chamber.