The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Mar. 01, 2021
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Chung-Hao Chen, Taoyuan, TW;

Hsiao-Hua Lu, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 29/50 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50004 (2013.01); G11C 13/0007 (2013.01); G11C 2029/5004 (2013.01);
Abstract

A cell trace circuit includes a memory cell, a voltage generator and a measuring circuit. The memory cell has a resistor and a memory layer coupled in series to have a top electrode, a middle electrode and a bottom electrode, wherein the resistor and the memory layer are coupled at the middle electrode. The voltage generator provides a test bias to the memory cell ranging from a negative voltage to a positive voltage in a reset path or ranging from the positive voltage to the negative voltage in a set path. The measuring circuit is to determine a current (I) and a voltage (V) crossing the memory layer by the test bias.


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