The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Oct. 30, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hongmei Wang, Boise, ID (US);

Jin Seung Son, McKinney, TX (US);

Andrea Ghetti, Concorezzo, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/08 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 8/08 (2013.01); G11C 7/12 (2013.01);
Abstract

Methods, systems, and devices for discharge current mitigation in a memory array are described. Access lines of a memory array may be divided into discrete segments, with each segment coupled with a driver for the access line by one or more vias respective to the segment. For example, a first segment of an access line may be coupled with a first set of memory cells, a second segment of the access line may be coupled with a second set of memory cells, and a driver may be coupled to the first segment by a first via and to the second segment by a second via. To access a memory cell in either the first set or the second, both the first segment of the access line and the second segment of the access line may be activated together by the common driver.


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