The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
May. 07, 2020
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventors:
Sungsil Cho, Anyang-si, KR;
Seobong Chang, Suwon, KR;
Jae Eon Park, GyeongGi-Do, KR;
Bryan C. Hendrix, Danbury, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Assignee:
ENTEGRIS, INC., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/36 (2006.01); C23C 16/56 (2006.01); C23C 22/73 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/36 (2013.01); C23C 16/56 (2013.01); C23C 22/73 (2013.01); H01L 21/0214 (2013.01); H01L 21/02263 (2013.01);
Abstract
Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with Oplasma.