The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Nov. 28, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Chun-Chieh Mo, Kaohsiung, TW;
Shih-Chi Kuo, Yangmei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/124 (2013.01); H01L 27/2436 (2013.01); H01L 45/04 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01); H01L 45/1616 (2013.01); H01L 45/1608 (2013.01);
Abstract
A memory cell includes: a first electrode; a resistive material layer comprising one horizontal portion and two vertical portions that are respectively coupled to ends of the horizontal portion; and a second electrode, wherein the second electrode is partially surrounded by a top boundary of the U-shaped profile and the first electrode extends along part of a bottom boundary of the U-shaped profile.