The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Aug. 17, 2018
Applicant:
Ulvac, Inc., Chigasaki, JP;
Inventors:
Tadamasa Kobayashi, Chigasaki, JP;
Hideaki Zama, Chigasaki, JP;
Assignee:
ULVAC, INC., Chigasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02274 (2013.01); H01L 29/36 (2013.01); H01L 29/66742 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming a semiconductor layer including an oxide semiconductor as a main component and forming an insulator layer on a surface of the semiconductor layer. The insulator layer includes silicon oside as a main component and has a hydrogen atom concentration that is less than or equal to 1×10atoms/cm.