The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Sep. 15, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Tatsuya Nishiwaki, Komatsu Ishikawa, JP;
Tsuyoshi Kachi, Nonoichi Ishikawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a first electrode, a semiconductor layer, a first conductive part, a second conductive part, and a second electrode. The semiconductor layer includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The first semiconductor region is electrically connected to the first electrode. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The first conductive part includes a buried electrode provided in the first semiconductor region with a first insulator interposed. The second conductive part includes a gate electrode provided on the buried electrode with a second insulator interposed. The first conductive part is electrically connected to the second conductive part. An electrical resistance of the first conductive part is greater than an electrical resistance of the second conductive part.