The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Jan. 05, 2021
Win Semiconductors Corp., Taoyuan, TW;
Chien-Rong Yu, Taoyuan, TW;
Shu-Hsiao Tsai, Taoyuan, TW;
Jui-Pin Chiu, Taoyuan, TW;
She-Hsin Hsiao, Taoyuan, TW;
WIN SEMICONDUCTORS CORP., Taoyuan, TW;
Abstract
A heterojunction bipolar transistor includes a bottom sub-collector layer formed over a substrate. The heterojunction bipolar transistor also includes an upper sub-collector layer formed over the bottom sub-collector layer. The heterojunction bipolar transistor also includes a collector layer formed over the upper sub-collector layer. The heterojunction bipolar transistor also includes a base layer formed over the collector layer. The heterojunction bipolar transistor also includes an emitter layer formed over the base layer. The heterojunction bipolar transistor also includes a passivation layer covering the bottom sub-collector layer, the upper sub-collector layer, the collector layer, the base layer, and the emitter layer. The heterojunction bipolar transistor also includes a collector electrode that covers the portion of the passivation layer that is over the sidewall of the upper sub-collector layer.