The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2022

Filed:

May. 19, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Papo Chen, San Jose, CA (US);

John Boland, Santa Clara, CA (US);

Schubert S. Chu, San Francisco, CA (US);

Errol Antonio C. Sanchez, Santa Clara, CA (US);

Stephen Moffatt, St. Brelade, JE;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14647 (2013.01); H01L 27/1463 (2013.01); H01L 27/14629 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01);
Abstract

Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.


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