The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Oct. 05, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Anhao Cheng, Hsinchu, TW;
Chun-Chang Liu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/525 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/304 (2013.01); H01L 21/76802 (2013.01); H01L 21/76804 (2013.01); H01L 21/76807 (2013.01); H01L 21/76852 (2013.01); H01L 21/76873 (2013.01); H01L 23/481 (2013.01); H01L 23/525 (2013.01); H01L 23/5226 (2013.01); H01L 24/02 (2013.01); H01L 24/11 (2013.01); H01L 24/20 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/0233 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13147 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01);
Abstract
A method of making a semiconductor device includes depositing a second conductive material over a first conductive material, wherein the second conductive material is different from the first conductive material, and the second conductive material defines a redistribution line (RDL). The method further includes depositing a passivation layer over the RDL, wherein depositing the passivation layer comprises forming a plurality of convex sidewalls, and each of the plurality of convex sidewalls extends beyond an edge of the RDL.