The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2022

Filed:

Mar. 26, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hiroyuki Hayashi, Nirasaki, JP;

Sena Fujita, Nirasaki, JP;

Keita Kumagai, Nirasaki, JP;

Keisuke Fujita, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/46 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02645 (2013.01); C23C 16/402 (2013.01); C23C 16/455 (2013.01); C23C 16/46 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01);
Abstract

There is provided a film forming method including: supplying a halogen-free silicon raw material gas and a halogen-containing silicon raw material gas into a processing container while lowering a temperature of a substrate accommodated in the processing container from a first temperature to a second temperature in a temperature lowering process; and supplying the halogen-free silicon raw material gas and the halogen-containing silicon raw material gas into the processing container while maintaining the temperature of the substrate at a third temperature in a temperature stabilizing process, that occurs after the temperature lowering process.


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