The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Dec. 22, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Cheng Lin, Hsinchu, TW;
Hui-Ting Yang, Hsinchu, TW;
Jiann-Tyng Tzeng, Hsinchu, TW;
Lipen Yuan, Hsinchu, TW;
Wei-An Lai, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device that includes identifying a first area in the layout diagram which is populated with cells, the first area including first and second rows extending substantially parallel to a first direction, the first and second rows having substantially different cell densities; relative to a second direction, substantially perpendicular to the first direction, the first and second rows having corresponding first (H1) and second (H2) heights. The method also includes replacing cells in the first row which have the H1 height with corresponding substitute cells, each substitute cell being correspondingly taller relative to the second direction and correspondingly narrower relative to the first direction, the replacing thereby increasing a density of the second row at least without substantially increasing a density of the first row.